Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105247
Type: Artigo de evento
Title: The Influence Of Substrates On The Carbon Nanotube Growth Process
Author: De Aguiar M.R.
Verissimo C.
Moshkalev S.A.
Swart J.W.
Abstract: Carbon nanotubes (CNTs) have attracted much attention due to their extraordinary properties. This nanostructured material has been synthesized by various methods and the chemical vapor deposition (CVD) has been shown to be an efficient and versatile technique. In this work, catalytic thermal CVD method, using a mixture of methane and hydrogen at atmospheric pressure on a horizontal tubular quartz furnace, was used to grow carbon nanotubes. Silicon wafers with SiO 2 or Al 2O 3 layers were used as substrates whereas thin nickel film was deposited over the substrates and used as catalyst. The interaction between catalyst nickel film and two different oxide layers supported on silicon wafers was studied as well as the influence of both substrates (Si/SiO 2 and Si/Al 2O 3) on the carbon nanotube growth. It was observed a completely different interaction between Ni film and both oxide layers, affecting strongly the growth of CNTs. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.2766892
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-45249118395&partnerID=40&md5=47ce2f1400977709ea9336394a9c98fe
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.