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|Type:||Artigo de evento|
|Title:||The Influence Of Substrates On The Carbon Nanotube Growth Process|
|Author:||De Aguiar M.R.|
|Abstract:||Carbon nanotubes (CNTs) have attracted much attention due to their extraordinary properties. This nanostructured material has been synthesized by various methods and the chemical vapor deposition (CVD) has been shown to be an efficient and versatile technique. In this work, catalytic thermal CVD method, using a mixture of methane and hydrogen at atmospheric pressure on a horizontal tubular quartz furnace, was used to grow carbon nanotubes. Silicon wafers with SiO 2 or Al 2O 3 layers were used as substrates whereas thin nickel film was deposited over the substrates and used as catalyst. The interaction between catalyst nickel film and two different oxide layers supported on silicon wafers was studied as well as the influence of both substrates (Si/SiO 2 and Si/Al 2O 3) on the carbon nanotube growth. It was observed a completely different interaction between Ni film and both oxide layers, affecting strongly the growth of CNTs. © The Electrochemical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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