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|Type:||Artigo de evento|
|Title:||Exciton Binding Energy In Type Ii Quantum Dots|
|Abstract:||We investigated the optical properties of self-assembled InP/GaAs quantum dots using continuous-wave and time-resolved photoluminescence spectroscopy. The thermal activation energy, which is directly related to the exciton binding energy in this system, was obtained by photoluminescence measurements as a function of temperature. We obtained thermal activation energies of 6-9 meV for undoped quantum dots and 13 meV for the modulation-doped sample. Those values are in good agreement with calculated results. The dots presented a recombination time of- 0.8-1.1 ns, which is surprisingly small for a type-II system. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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