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Type: Artigo de evento
Title: Exciton Binding Energy In Type Ii Quantum Dots
Author: Gomes P.F.
Godoy M.P.F.
Veloso A.B.
Nakaema M.K.K.
Iikawa F.
Brasil M.J.S.P.
Bortoleto J.R.R.
Cotta M.A.
Madureira J.R.
Abstract: We investigated the optical properties of self-assembled InP/GaAs quantum dots using continuous-wave and time-resolved photoluminescence spectroscopy. The thermal activation energy, which is directly related to the exciton binding energy in this system, was obtained by photoluminescence measurements as a function of temperature. We obtained thermal activation energies of 6-9 meV for undoped quantum dots and 13 meV for the modulation-doped sample. Those values are in good agreement with calculated results. The dots presented a recombination time of- 0.8-1.1 ns, which is surprisingly small for a type-II system. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Rights: fechado
Identifier DOI: 10.1002/pssc.200673217
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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