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|Type:||Artigo de evento|
|Title:||Structural And Optical Properties Of Inp Quantum Dots Grown On Gaas (001)|
|Author:||De Godoy M.P.F.|
|Abstract:||We present structural and optical properties of type-II self-assembled InP/GaAs quantum dots using different techniques. The results reveal that the uncapped InP dots present an efficient optical emission and are partially relaxed: strain relaxation increases with the amount of InP deposited. The photoluminescence spectra show two optical emission bands associated to the quantum dots, in agreement with the bi-modal dot-height distribution observed by atomic force microscopy. We observed distinct photoluminescence results for uncapped and capped samples, which are mainly attributed to surface state and strain relaxation effects. A remarkable result is the large blue shift of the optical emission band from uncapped sample as compared to capped one for increasing excitation intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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