Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105233
Type: Artigo de evento
Title: Structural And Optical Properties Of Inp Quantum Dots Grown On Gaas (001)
Author: De Godoy M.P.F.
Nakaema M.K.K.
Lopes J.M.J.
Morschbacher M.J.
Iikawa F.
Brasil M.J.S.P.
Magalhaes-Paniago R.
Bortoleto J.R.R.
Cotta M.A.
Abstract: We present structural and optical properties of type-II self-assembled InP/GaAs quantum dots using different techniques. The results reveal that the uncapped InP dots present an efficient optical emission and are partially relaxed: strain relaxation increases with the amount of InP deposited. The photoluminescence spectra show two optical emission bands associated to the quantum dots, in agreement with the bi-modal dot-height distribution observed by atomic force microscopy. We observed distinct photoluminescence results for uncapped and capped samples, which are mainly attributed to surface state and strain relaxation effects. A remarkable result is the large blue shift of the optical emission band from uncapped sample as compared to capped one for increasing excitation intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Editor: 
Rights: fechado
Identifier DOI: 10.1002/pssc.200673248
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-50049098406&partnerID=40&md5=dc0127368faab897701d43cd9b62b10f
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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