Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105221
Type: Artigo de evento
Title: Plasma Etching Of Polycrystalline Silicon Using Thinning Technology For Application In Cmos And Mems Technologies
Author: Nunes A.M.
Moshkalev S.A.
Tatsch P.J.
Daltrini A.M.
Abstract: This work presents results of the study of profile evolution for Si-poly structures during plasma etching using the thinning technology in SF6/CF4/CHF3 gas mixtures. Structures with an aspect ratio (height/width) up to 5, widths end in the range of 0.3 - 0.1 μm and 0.3μm thick, were produced. Sipoly structures with high anisotropy (anisotropy factor up to 0.92-0.98) after etching were demostrated. The method can be used for fabrication of sub-micron Si-poly gates in CMOS and in fabrication of MEMS devices.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-50049083336&partnerID=40&md5=35d73389be5530e1a24771f1779a6d4a
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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