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|Type:||Artigo de evento|
|Title:||Plasma Etching Of Polycrystalline Silicon Using Thinning Technology For Application In Cmos And Mems Technologies|
|Abstract:||This work presents results of the study of profile evolution for Si-poly structures during plasma etching using the thinning technology in SF6/CF4/CHF3 gas mixtures. Structures with an aspect ratio (height/width) up to 5, widths end in the range of 0.3 - 0.1 μm and 0.3μm thick, were produced. Sipoly structures with high anisotropy (anisotropy factor up to 0.92-0.98) after etching were demostrated. The method can be used for fabrication of sub-micron Si-poly gates in CMOS and in fabrication of MEMS devices.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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