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|Type:||Artigo de periódico|
|Title:||Influence Of Miscibility On The Energy-gap Dispersion In Alx Ga1-x N Alloys: First-principles Calculations|
|Abstract:||We present first-principles calculations of the electronic properties of Alx Ga1-x N alloys. Resulting from a low spinodal decomposition temperature, the miscibility of AlN and GaN at the growth temperatures is very high. Due to a likely low diffusion rate it is possible to prepare the alloy at different configurations with different properties and energy band gaps. The calculated band gaps are found to be mostly dependent on the local order and composition rather than dependent on the global composition. The different gaps investigated here provide an explanation for the discrepancies of the experimental values of the Alx Ga1-x N bowing parameter found in the literature. © 2007 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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