Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/104789
Type: Artigo
Title: Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(100) using Mg Kα radiation and synchrotron light
Author: Flüchter, C. R.
Siervo, A. de
Weier, D.
Schürmann, M.
Berges, U.
Dreiner, S.
Carazzolle, M. F.
Landers, R.
Kleiman, G. G.
Westphal, C.
Abstract: In order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO2. A major problem of the system HfO2/Si(1 0 0) is the silicidation of hafnium at the interface. Therefore, ultrathin films (3-30 Å) of HfSi2 on Si(1 0 0) were investigated by photoelectron spectroscopy, low-energy electron diffraction and X-ray photoelectron diffraction. Synchrotron light with an energy of hν = 180 eV was used for excitation. First results were obtained using a Mg X-ray tube (hν = 1253.6 eV). In order to determine the structure of the films, the recorded photoelectron diffraction patterns were compared to computer simulations of model structures. The simulations for the low-energy measurements were performed using the program MSPHD. As a result a modified zirconium silicide structure is presented in order to describe the structure of ultrathin HfSi2 films on Si(1 0 0). © 2006 Elsevier B.V. All rights reserved.
In order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO2. A major problem of the system HfO2/Si(1 0 0) is the silicidation of hafnium at the interface. Therefore, ultrathin films (3-30 A) of HfSi2 on Si(1 0 0) were investigated by photoelectron spectroscopy, low-energy electron diffraction and X-ray photoelectron diffraction. Synchrotron light with an energy of h? = 180 eV was used for excitation. First results were obtained using a Mg X-ray tube (h? = 1253.6 eV). In order to determine the structure of the films, the recorded photoelectron diffraction patterns were compared to computer simulations of model structures. The simulations for the low-energy measurements were performed using the program MSPHD. As a result a modified zirconium silicide structure is presented in order to describe the structure of ultrathin HfSi2 films on Si(1 0 0).
In order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO2. A major problem of the system HfO2/Si(1 0 0) is the silicidation of hafnium at the interface. Therefore, ultrathin films (3–30 A) of HfSi2 on Si(1 0 0) were investigated by photoelectron spectroscopy, low-energy electron diffraction and X-ray photoelectron diffraction. Synchrotron light with an energy of hν = 180 eV was used for excitation. First results were obtained using a Mg X-ray tube (hν = 1253.6 eV). In order to determine the structure of the films, the recorded photoelectron diffraction patterns were compared to computer simulations of model structures. The simulations for the low-energy measurements were performed using the program MSPHD. As a result a modified zirconium silicide structure is presented in order to describe the structure of ultrathin HfSi2 films on Si(1 0 0).
Subject: Espectroscopia fotoeletrônica
Fotoelétrons - Difração
Silício
Country: Holanda
Editor: Elsevier
Citation: Journal Of Electron Spectroscopy And Related Phenomena. , v. 156-158, n. , p. 92 - 96, 2007.
Rights: fechado
Identifier DOI: 10.1016/j.elspec.2006.11.028
Address: https://www.sciencedirect.com/science/article/pii/S0368204806001782
Date Issue: 2007
Appears in Collections:IFGW - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-34247390111.pdf778.13 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.