Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/104789
Type: Artigo de periódico
Title: Photoelectron Diffraction Study And Structure Determination Of Ultrathin Hafnium Silicide Layers On Silicon(1 0 0) Using Mg Kα Radiation And Synchrotron Light
Author: Fluchter C.R.
de Siervo A.
Weier D.
Schurmann M.
Berges U.
Dreiner S.
Carazzolle M.F.
Landers R.
Kleiman G.G.
Westphal C.
Abstract: In order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO2. A major problem of the system HfO2/Si(1 0 0) is the silicidation of hafnium at the interface. Therefore, ultrathin films (3-30 Å) of HfSi2 on Si(1 0 0) were investigated by photoelectron spectroscopy, low-energy electron diffraction and X-ray photoelectron diffraction. Synchrotron light with an energy of hν = 180 eV was used for excitation. First results were obtained using a Mg X-ray tube (hν = 1253.6 eV). In order to determine the structure of the films, the recorded photoelectron diffraction patterns were compared to computer simulations of model structures. The simulations for the low-energy measurements were performed using the program MSPHD. As a result a modified zirconium silicide structure is presented in order to describe the structure of ultrathin HfSi2 films on Si(1 0 0). © 2006 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.elspec.2006.11.028
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-34247390111&partnerID=40&md5=a263c26042b7843c94837c365f79690e
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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