Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/104786
Type: Artigo
Title: Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD
Author: Carazzolle, M. F.
Schurmann, M.
Fluchter, C. R.
Weier, D.
Berges, U.
Siervo, A. de
Landers, R.
Kleiman, G. G.
Westphal, C.
Abstract: In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 °C annealing, there is alloy formation and after 700 °C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation. © 2007 Elsevier B.V. All rights reserved.
In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 ?C annealing, there is alloy formation and after 700 ?C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation.
In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 ◦C annealing, there is alloy formation and after 700 ◦C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation.
Subject: Silício
Superfícies (Física)
Espectroscopia fotoeletrônica de raio X
Elétrons - Difração
Country: Holanda
Editor: Elsevier
Citation: Journal Of Electron Spectroscopy And Related Phenomena. , v. 156-158, n. , p. 393 - 397, 2007.
Rights: fechado
Identifier DOI: 10.1016/j.elspec.2006.12.062
Address: https://www.sciencedirect.com/science/article/pii/S0368204807000114
Date Issue: 2007
Appears in Collections:IFGW - Artigos e Outros Documentos

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