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|Type:||Artigo de periódico|
|Title:||Structural And Electronic Analysis Of Hf On Si(1 1 1) Surface Studied By Xps, Leed And Xpd|
de Siervo A.
|Abstract:||In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 °C annealing, there is alloy formation and after 700 °C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation. © 2007 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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