Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/104784
Type: Artigo de periódico
Title: Electronic Structure Of Xenon Implanted With Low Energy In Amorphous Silicon
Author: Barbieri P.F.
Landers R.
de Oliveira Jr. M.H.
Alvarez F.
Marques F.C.
Abstract: Electronic struture of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M4N45N45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix. © 2007 Elsevier B.V. All rights reserved.
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Rights: fechado
Identifier DOI: 10.1016/j.elspec.2006.12.064
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-34247345835&partnerID=40&md5=bf5a55f0e36727f4bff4ccfabdf1b6b1
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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