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Type: Artigo de periódico
Title: Carrier Dynamics In Stacked Inpgaas Quantum Dots
Author: Veloso A.B.
Nakaema M.K.K.
De Godoy M.P.F.
Lopes J.M.J.
Iikawa F.
Brasil M.J.S.P.
Bortoleto J.R.R.
Cotta M.A.
Fichtner P.F.P.
Morschbacher M.
Madureira J.R.
Abstract: We investigated two stacked layers of InPGaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. © 2007 American Institute of Physics.
Rights: aberto
Identifier DOI: 10.1063/1.2789705
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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