Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/104362
Type: Artigo de periódico
Title: Strain Relaxation And Stress-driven Interdiffusion In Inasingaasinp Nanowires
Author: Nieto L.
Bortoleto J.R.R.
Cotta M.A.
Magalhaes-Paniago R.
Gutirrez H.R.
Abstract: The authors have investigated strain relaxation in InAsInGaAsInP nanowires (NW's). Transmission electron microscopy images show an additional stress field attributed to compositional modulation in the ternary layer, which disrupts NW formation and drives Ga interdiffusion into InAs, according to grazing incidence x-Ray diffraction under anomalous scattering conditions. The strain profile along the NW, however, is not significantly affected when interdiffusion is considered. Results show that the InAs NW energetic stability is preserved with the introduction of ternary buffer layer in the structure. © 2007 American Institute of Physics.
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Rights: aberto
Identifier DOI: 10.1063/1.2764446
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-34547838676&partnerID=40&md5=17207255fe26cfe101efc8e503c22e0e
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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