Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/104351
Type: Artigo de periódico
Title: Type-i Optical Emissions In Gesi Quantum Dots
Author: Gomes P.F.
Iikawa F.
Cerdeira F.
Larsson M.
Elfving A.
Hansson G.V.
Ni W.-X.
Holtz P.-O.
Abstract: The authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics.
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Rights: aberto
Identifier DOI: 10.1063/1.2764113
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-34547690930&partnerID=40&md5=e33124b6a0979b84fa59536949420840
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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