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Type: Artigo de evento
Title: Impact Of Si Nanocrystals In A-siox〈er〉 In C-band Emission For Applications In Resonators Structures
Author: Figueira D.S.L.
Mustafa D.
Tessler L.R.
Frateschi N.C.
Abstract: Si nanocrystals (Si-NC) in a-SiOx〈Er〉 were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm for samples with erbium. Emission in the "C-Band" region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er 3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples. © 2007 IEEE.
Rights: fechado
Identifier DOI: 10.1109/IMOC.2007.4404253
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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