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|Type:||Artigo de evento|
|Title:||Impact Of Si Nanocrystals In A-siox〈er〉 In C-band Emission For Applications In Resonators Structures|
|Abstract:||Si nanocrystals (Si-NC) in a-SiOx〈Er〉 were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm for samples with erbium. Emission in the "C-Band" region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er 3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples. © 2007 IEEE.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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