Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103969
Type: Artigo de evento
Title: Reactive Ion Etching Of Polycrystalline Silicon Using Thinning Technology In Fluorine Based Mixtures
Author: Nunes A.M.
Moshkalyov S.A.
Tatsch P.J.
Daltrini A.M.
Abstract: This work presents the results of the study of etching profile evolution using the thinning technology for Si-poly structures with SF6/CF 4/CHF3 gas mixtures. Structures with a aspect ratio (height/width) up to 5 and widths in the range of 0.1-0.3 μm were produced. High anisotropy of etched Si-poly structures (anisotropy factor up to 0.92-0.98) was demostrated. The method can be used for fabrication of sub-micron Si-poly gates in CMOS. © 2006 The Electrochemical Society.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33847623613&partnerID=40&md5=03b66255dc0d7614066dd6154dba1de2
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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