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Type: Artigo de evento
Title: Annealing Temperature Dependence Of 1550 Nm Emission Of Hydrogenated Amorphous Silicon Films Co-deposited With Erbium
Author: Figueira D.
Mustafa D.
Tessler L.R.
Frateschi N.C.
Abstract: We present an experimental study of the influence of annealing temperature in the room temperature 1550 nm (∼0.8eV) photoluminescence (PL) of Er 3+ co-deposited with silicon on silicon dioxide matrix to be used for light emission in microdisk resonators. © 2006 The Electrochemical Society.
Rights: fechado
Identifier DOI: 
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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