Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103964
Type: Artigo de evento
Title: Annealing Temperature Dependence Of 1550 Nm Emission Of Hydrogenated Amorphous Silicon Films Co-deposited With Erbium
Author: Figueira D.
Mustafa D.
Tessler L.R.
Frateschi N.C.
Abstract: We present an experimental study of the influence of annealing temperature in the room temperature 1550 nm (∼0.8eV) photoluminescence (PL) of Er 3+ co-deposited with silicon on silicon dioxide matrix to be used for light emission in microdisk resonators. © 2006 The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33847668731&partnerID=40&md5=1d8d8a9ef625aabbd46acae7ecd05313
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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