Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103954
Type: Artigo de evento
Title: Electrical Properties Of Individual And Small Ensembles Of Inas/inp Nanostructures
Author: Vicaro K.O.
Gutierrez H.R.
Bortoleto J.R.R.
Nieto L.
Von Zuben A.A.G.
Seabra A.C.
Schulz P.A.
Cotta M.A.
Abstract: We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Editor: 
Rights: fechado
Identifier DOI: 10.1002/pssa.200566109
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33646763887&partnerID=40&md5=107a446e2f7753cee9c9046a832a2d44
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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