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|Type:||Artigo de periódico|
|Title:||Segregation Trends Of The Metal Alloys Mo-re And Mo-pt On Hfo 2: A First-principles Study|
|Abstract:||Using first-principles calculations, we compared the segregation trends at the surface of metal alloys with those at an interface with HfO 2. The choice of this oxide was motivated by its significance as a potential replacement for SiO 2 in advanced transistors. We considered Mo-Re and Mo-Pt alloys as typical examples of disordered and ordered alloys, respectively. The segregation to the surface/interface was analyzed in terms of metal and oxygen adsorption energies. It is shown that chemical bonding at the metal/oxide interface strongly influences segregation both in Mo-Re and Mo-Pt alloys. In particular, bonding with oxygen atoms at the oxide/Mo-Re alloy interface depletes the Re content of the interfacial layer. In the case of Mo-Pt on HfO 2 an oxygen-rich interface promotes the formation of one monolayer (but not two monolayers) of Mo separating PtMo x from HfO 2, while a stoichiometric interface favors an abrupt PtMo xHfO 2 interface. This study also shows that the presence of Mo in the alloy stabilizes Pt which can potentially decrease the tendency of Pt to diffuse into the oxide matrix. The individual constituents of these intermetallic compounds exhibit high vacuum work functions, and therefore these alloys are also likely to have sufficiently high work functions to be considered as promising candidates for p-type gate electrodes in future generations of transistors. © 2006 American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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