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|Type:||Artigo de periódico|
|Title:||Cyclotron Effective Mass And Land́ G Factor In Gaas- Ga1-x Alx As Quantum Wells Under Growth-direction Applied Magnetic Fields|
|Author:||De Dios-Leyva M.|
|Abstract:||We have performed a theoretical study of the cyclotron effective mass and electron effective Land́ g∥ factor in semiconductor GaAs- Ga1-x Alx As quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. The theoretical approach is within the nonparabolic and effective-mass approximation and via an Ogg-McCombe effective Hamiltonian [Proc. Phys. Soc. London 89, 431 (1969); Phys. Rev. 181, 1206 (1969)] for the electron in the conduction band of the GaAs- Ga1-x Alx As heterostructure, which allows a unified treatment of both the cyclotron mass and g∥ factor. Calculations are performed for different widths of the GaAs- Ga1-x Alx As quantum wells and as functions of the applied magnetic field, with results in very good agreement with reported experimental measurements of the electron cyclotron effective mass and g∥ factor. © 2006 American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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