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|Type:||Artigo de periódico|
|Title:||X-ray Diffraction Mapping Of Strain Fields And Chemical Composition Of Sige:si(001) Quantum Dot Molecules|
|Abstract:||A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7 Ge0.3 film grown by molecular beam epitaxy at 550°C and a 1 s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition. © 2006 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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