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Type: Artigo de periódico
Title: X-ray Diffraction Mapping Of Strain Fields And Chemical Composition Of Sige:si(001) Quantum Dot Molecules
Author: Leite M.S.
Gray J.L.
Hull R.
Floro J.A.
Magalhaes-Paniago R.
Medeiros-Ribeiro G.
Abstract: A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7 Ge0.3 film grown by molecular beam epitaxy at 550°C and a 1 s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition. © 2006 The American Physical Society.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.73.121308
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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