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Type: Artigo de periódico
Title: Exciton G Factor Of Type-ii Inp Gaas Single Quantum Dots
Author: De Godoy M.P.F.
Gomes P.F.
Nakaema M.K.K.
Iikawa F.
Brasil M.J.S.P.
Caetano R.A.
Madureira J.R.
Bortoleto J.R.R.
Cotta M.A.
Ribeiro E.
Marques G.E.
Bittencourt A.C.R.
Abstract: We investigated the magneto-optical properties of type-II InP GaAs quantum dots using single-dot spectroscopy. The emission energy from individual dots presents a quadratic diamagnetic shift and a linear Zeeman splitting as a function of magnetic fields up to 10 T, as previously observed for type-I systems. We analyzed the in-plane localization of the carriers using the diamagnetic shift results. The values for the exciton g factor obtained for a large number of a InP GaAs dots are mainly constant, independent of the emission energy, and therefore, of the quantum dot dimensions. The result is attributed to the weak confinement of the holes in type-II InP GaAs quantum dots. © 2006 The American Physical Society.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.73.033309
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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