Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103444
Type: Artigo de periódico
Title: X-ray Multiple Diffraction In The Characterization Of Tino And Tio2 Thin Films Grown On Si(0 0 1)
Author: Chiaramonte Th.
Abramof E.
Fabreguette F.
Sacilotti M.
Cardoso L.P.
Abstract: TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (-80 Å/min) of TiO2 and (-40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., φ{symbol}-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained. © 2006 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.apsusc.2006.02.064
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33750741903&partnerID=40&md5=398be2f1647c5100ba6de81d5ec84015
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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