Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103389
Type: Artigo de evento
Title: Morphological Study Of Polycrystalline Sige Alloy Deposited By Vertical Lpcvd
Author: Teixeira R.C.
Doi I.
Diniz J.A.
Swart J.W.
Zakia M.B.P.
Abstract: As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a vertical LPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor) gate electrode.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33746045313&partnerID=40&md5=9be63d70b711d2bac4dccc6770bd5c7c
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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