Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103388
Type: Artigo de evento
Title: Sno 2 Extended Gate Field-effect Transistor As Ph Sensor
Author: Batista P.D.
Mulato M.
Graeff C.F.D.O.
Fernandez F.J.R.
Marques F.D.C.
Abstract: Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrode and a MOSFET device, which can be applied to the measurement of ion content in a solution. This structure has a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFET). In this work, we constructed an EGFET by connecting the sensing structure fabricated with SnO 2 to a commercial MOSFET (CD4007UB). From the numerical simulation of site binding model it is possible to determine some of the desirable characteristics of the films. We investigate and compare SnO 2 films prepared using both the Sol-gel and the Pechini methods. The aim is an amorphous material for the EGFET. The SnO 2 powder was obtained at different calcinating temperatures (200 - 500°C) and they were investigated by X-ray diffraction (XRD), infrared spectroscopy (IR), thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The films were investigated as pH sensors (range 2-11).
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33746061696&partnerID=40&md5=8cda6341058c383c85309c66ff4f9817
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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