Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103128
Type: Artigo de evento
Title: Investigations Of Intrinsic Strain And Structural Ordering In A-si:h Using Synchrotron Radiation Diffraction
Author: Harting M.
Britton D.T.
Minani E.
Ntsoane T.P.
Topic M.
Thovhogi T.
Osiele O.M.
Knoesen D.
Harindintwari S.
Furlan F.
Giles C.
Abstract: The residual strain in a-Si:H layers has been determined directly using synchrotron radiation diffraction, at LNLS in Brazil, by two different methodologies. Using a method previously presented using laboratory X-ray sources, the height and length of side of the Si-Si4 tetrahedron are determined from variations in the diffraction angle of the first two amorphous peaks. In a more extensive calculation, the spatially dependent pair correlation function is calculated, allowing the separation of strain resulting from changes in the bond length and the bond angle. Two different layers, deposited by HW-CVD on glass substrates at growth temperatures of 300 and 500 °C, have been studied to investigate the effect of growth temperature on residual stress. © 2005 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.tsf.2005.07.110
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-32644460122&partnerID=40&md5=987d1584130d0e11546a84fa3ad0169d
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-32644460122.pdf112.28 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.