Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/103042
Type: Artigo de periódico
Title: Landé G Tensor In Semiconductor Nanostructures
Author: Alegre T.P.M.
Hernandez F.G.G.
Pereira A.L.C.
Medeiros-Ribeiro G.
Abstract: Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing mapping of the g-tensor modulus for the s and p shells. We find that the g tensors for the s and p shells exhibit a very different behavior. The s state, being more localized, probes the confinement potential details by sweeping the magnetic-field orientation from the growth direction towards the in-plane direction. For the p state, the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. In addition to the assessment of the g tensor, these results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed. © 2006 The American Physical Society.
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Rights: aberto
Identifier DOI: 10.1103/PhysRevLett.97.236402
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33845364822&partnerID=40&md5=3ad33be2ccceebbd442deb65dacf2e26
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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