Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102744
Type: Artigo de periódico
Title: Cv Characteristics Of Polycrystalline Sige Films With Low Ge Concentration
Author: Teixeira R.C.
Doi I.
Diniz J.A.
Swart J.W.
Pinto Zakia M.B.
Abstract: SiGe alloys are currently used for HBT and MOS as epitaxial layers for base or strained channel, respectively. In the poly phase, SiGe has been studied as a replacement for poly-Si in MOS gates due to its lower thermal budget and gate depletion and also due to the Workfunction Engineering for Vt adjustments. However, for application to CMOS technology as poly-SiGe gates, others constrains emerge such as quality of the oxide interface and etch chemistry. For both applications, the Ge fraction normally lies between 20% and 40%. In this study, authors use a low Ge contents (1%) poly-SiGe thin films aiming for MOS gate electrode. The Ge fraction was determined by RBS analysis. 230 nm thick samples were deposited onto 10 nm thermally oxidized 〈1 0 0〉, p-type Si substrates using silane and germane. Films were deposited in the temperature of 500 °C and total pressure of 667 Pa (5 Torr) by vertical LPCVD. The samples were doped using 31P+ ion implantation from 5 × 1014 cm-2 up to 2 × 1016 cm-2 and annealed by RTP (40 s) from 500 °C up to 900 °C. Rs values were obtained by 4-point probe technique and CV curves were extracted from nMOS capacitors with 200 μm diameter. The same processing steps were used to fabricate similar poly-Si samples and capacitors for comparison. The poly-SiGe samples presented Rs values one order of magnitude lower than poly-Si and CV analysis of nMOS capacitors showed very good characteristics. The 1% Ge in the alloy ensures a low thermal budget for the overall process. Although a relatively high annealing temperature (800 °C) must be used to reduce oxide charge and interface traps, the temperature is well below the necessary for poly-Si processing and can allow formation of the shallow junctions needed for next technological nodes. © 2006 Elsevier B.V. All rights reserved.
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Rights: fechado
Identifier DOI: 10.1016/j.nimb.2006.10.010
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-37849186200&partnerID=40&md5=7fbca5cb81ba492a98cd0a529e37beee
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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