Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102742
Type: Artigo de periódico
Title: Ion Irradiation Effects On A-c:h, A-c:n:h And A-c:f:h Films
Author: Galvao J.R.
Luce F.P.
Baptista D.L.
da Costa M.E.M.M.
Lepienski C.M.
Zawislak F.C.
Abstract: Hydrogenated amorphous carbon (a-C:H) films as well as films with incorporated nitrogen (a-C:N:H) and fluorine (a-C:F:H) have been irradiated with 400 keV N+ at fluences ranging from 1014 to 3 × 1016 ions cm-2. The films were 200 nm thick deposited on Si and irradiated at RT. The loss of H, N and F as function of the irradiated fluences was monitored via nuclear reactions. The results show that: (i) the loss of H in all cases is well explained by the molecular recombination model; (ii) there is no loss of N and F as function of fluence for the a-C:N:H and a-C:F:H films. The evolution of the hardness and Young modulus for the three films reach the same values of ≈12 and 130 GPa, respectively, at maximum fluence. The intrinsic stress data show a change from a compressive stress to a relaxed structure after irradiations. The Raman data confirm the microstructural evolution of the samples into a structure containing a large number of disordered sp2-C clusters. © 2006 Elsevier B.V. All rights reserved.
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Rights: fechado
Identifier DOI: 10.1016/j.nimb.2006.04.040
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33745850797&partnerID=40&md5=59149f71932af8ddbb3bfbba0a95a244
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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