Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102740
Type: Artigo de periódico
Title: Effect Of Processing Parameters On Control Of Defect Centers Associated With Second-order Harmonic Generation And Photosensitivity In Sio2:geo2 Glass Preforms
Author: Cuevas R.F.
Sekiya E.H.
Garcia-Quiroz A.
Da Silva E.C.
Suzuki C.K.
Abstract: In this research, the effect of the H2/O2 ratio and the processing temperature parameters on the inducing and enhancement of the defect centers associated to the second-order optical non-linearity in SiO2:GeO2 glass preforms, prepared by vapor-phase axial deposition method, have been investigated. The formation of germanium oxygen deficient centers and the development of paramagnetic structures induced in the glass preforms after X-ray irradiation were investigated using UV-Vis absorption spectroscopy and electronic spin resonance. The results indicate that the concentration of germanium oxygen deficient centers increases exponentially when the H2/O2 ratio decreases, while the processing temperature increases, simultaneously. The electronic spin resonance spectra profiles, shows that defects of the electron trapped centers type [Ge(1), Ge(2)] are induced by the effect of X-ray irradiation. An efficient generation of defect centers associated to the second-order optical non-linearity in SiO2:GeO2 glass preforms, occurring in samples prepared with low H2/O2 ratios and high processing temperatures, have been observed. © 2005 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.nimb.2005.12.050
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33646514678&partnerID=40&md5=b16196adb74052567033cb5597e895f7
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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