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|Type:||Artigo de evento|
|Title:||Electrical Characterization Of Ingan Quantum Well P-n Heterostructures|
Da Silva M.I.N.
|Abstract:||In this work, two methods for electrical characterization of InGaN quantum well p-n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p-n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution. © 2003 Elsevier Science Ltd. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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