Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102642
Type: Artigo de evento
Title: Electrical Characterization Of Ingan Quantum Well P-n Heterostructures
Author: Gonzalez J.C.
Da Silva M.I.N.
Bunker K.L.
Batchelor A.D.
Russell P.E.
Abstract: In this work, two methods for electrical characterization of InGaN quantum well p-n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p-n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution. © 2003 Elsevier Science Ltd. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(03)00072-7
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038242963&partnerID=40&md5=2b24201112b8d37194fcf41755c30e4d
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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