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|Type:||Artigo de evento|
|Title:||Cross-sectional Scanning Probe Microscopy Of Gan-based P-n Heterostructures|
|Author:||Da Silva M.I.N.|
|Abstract:||In this work, the structural and electrical properties of a GaN-based p-n heterostructure are studied using cross-sectional Atomic Force Microscopy, Friction Force Microscopy, Electrical Force Gradient Microscopy, and Surface Potential Microscopy. Using Atomic Force Microscopy and Friction Force Microscopy, we were able to identify and measure the thickness of the layers present in the heterostructures. The electrical conductivity type of the different layers as well as the p-n junction, and piezoelectric fields were identified and studied using Electric Force Gradient Microscopy and Surface Potential Microscopy. © 2003 Elsevier Science Ltd. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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