Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102639
Type: Artigo de periódico
Title: The Protective Effect Of Thin Amorphous Hydrogenated Carbon A-c:h Films During Metallisation Of Metal-carbon-oxide-silicon (mcos) Diodes
Author: Balachova O.V.
Braga E.S.
Abstract: Capacitance-voltage (C-V) characteristics of the as-grown metal(Al)-carbon-oxide(SiO2)-semiconductor(Si) structures are examined at the frequency of 1 MHz and compared with the C-V characteristics of the conventional metal(Al)-SiO2-Si (MOS) structures. The density of the oxide charge Qo/q is extracted from the experimental results. Qo/q was found to be 1×1012cm-2 for the MOS structures and 7×1011cm-2 for the metal-carbon-oxide-silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers. © 2003 Elsevier Science Ltd. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(03)00008-9
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038486938&partnerID=40&md5=90eed7a59412d9a61d8ce4b34433a514
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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