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Type: Artigo de periódico
Title: Photoreflectance Studies Of Optical Transitions In Cubic Gan Grown On Gaas(0 0 1) Substrates
Author: Noriega O.C.
Tabata A.
Soares J.A.N.T.
Rodrigues S.C.P.
Leite J.R.
Ribeiro E.
Fernandez J.R.L.
Meneses E.A.
Cerdeira F.
As D.J.
Schikora D.
Lischka K.
Abstract: The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy using a nitrogen RF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. © 2003 Elsevier Science B.V. All rights reserved.
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(02)02517-4
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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