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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.subject.otherMETALLOORGANIC DECOMPOSITIONen
dc.subject.otherFERROELECTRIC CD2NB2O7en
dc.subject.otherPHASE-TRANSITIONSen
dc.subject.otherCOMPOUNDen
dc.typeArtigo de periódicopt_BR
dc.type.categoryoriginal articlept_BR
dc.type.versionpublishedVersionpt_BR
dc.titlePreparation and characterization of Cd(2)Nb(2)O(7) thin films on Si substratespt_BR
dc.contributor.authorRONCONI, Celia M.pt_BR
dc.contributor.authorGONCALVES, Deborapt_BR
dc.contributor.authorSUVOROVA, Nathaliapt_BR
dc.contributor.authorALVES, Oswaldo L.pt_BR
dc.contributor.authorIRENE, Eugene A.pt_BR
unicamp.authorALVES, Oswaldo L.:Universidade Estadual de Campinas, Instituto de Químicapt_BR
unicamp.author.externalRONCONI, Celia M.pt
unicamp.author.externalSUVOROVA, Nathaliapt
unicamp.author.externalIRENE, Eugene A.pt
unicamp.author.externalGONCALVES, Deborapt
dc.subjectCeramicspt_BR
dc.subjectNanostructurespt_BR
dc.subjectOxidespt_BR
dc.subjectThin filmspt_BR
dc.subjectDielectric propertiespt_BR
dc.subject.wosChemistry, Multidisciplinarypt_BR
dc.subject.wosPhysics, Condensed Matterpt_BR
dc.description.abstractThin Cd(2)Nb(2)O(7) films were grown on single-crystal p-type SiO(2)/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO(2)/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance-voltage (C-V) measurements. (c) 2008 Elsevier Ltd. All rights reserved.en
dc.relation.ispartofJournal of Physics and Chemistry of Solidspt_BR
dc.publisher.countryInglaterrapt_BR
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDpt_BR
dc.date.issued2009pt_BR
dc.identifier.citationJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.70, n.1, p.234-237, 2009pt_BR
dc.language.isoengpt_BR
dc.description.volume70pt_BR
dc.description.issuenumber1pt_BR
dc.description.firstpage234pt_BR
dc.description.lastpage237pt_BR
dc.rightsfechadopt_BR
dc.rights.holderCopyright PERGAMON-ELSEVIER SCIENCE LTDpt_BR
dc.sourceWOSpt_BR
unicamp.cruespUSPpt_BR
dc.identifier.issn0022-3697pt_BR
dc.identifier.doi10.1016/j.jpcs.2008.10.006pt_BR
dc.identifier.urlhttp://apps.isiknowledge.com/InboundService.do?Func=Frame&product=WOS&action=retrieve&SrcApp=EndNote&UT=000262558900037&Init=Yes&SrcAuth=ResearchSoft&mode=FullRecordpt_BR
dc.identifier.urlhttp://dx.doi.org/10.1016/j.jpcs.2008.10.006pt_BR
dc.date.available2013-07-26T17:59:13Z
dc.date.available2016-07-01T12:53:59Z-
dc.date.accessioned2013-07-26T17:59:13Z
dc.date.accessioned2016-07-01T12:53:59Z-
dc.description.provenanceMade available in DSpace on 2013-07-26T17:59:13Z (GMT). No. of bitstreams: 2 art_RONCONI_Preparation_and_characterization_of_Cd2Nb2O7_thin_films_2009.pdf.txt: 18535 bytes, checksum: 18be8f37dfcfa204bb6c0b49f0ded24b (MD5) art_RONCONI_Preparation_and_characterization_of_Cd2Nb2O7_thin_films_2009.pdf: 871102 bytes, checksum: 52a65d51cd44bc43c51d327c2b33ff62 (MD5) Previous issue date: 2009en
dc.description.provenanceMade available in DSpace on 2016-07-01T12:53:59Z (GMT). No. of bitstreams: 2 art_RONCONI_Preparation_and_characterization_of_Cd2Nb2O7_thin_films_2009.pdf.txt: 18535 bytes, checksum: 18be8f37dfcfa204bb6c0b49f0ded24b (MD5) art_RONCONI_Preparation_and_characterization_of_Cd2Nb2O7_thin_films_2009.pdf: 871102 bytes, checksum: 52a65d51cd44bc43c51d327c2b33ff62 (MD5) Previous issue date: 2009en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/1025
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/1025-
dc.contributor.unidadeIQpt
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