Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102293
Type: Artigo de evento
Title: Near Infra-red Photoluminescence Of Nd3+ In Hydrogenated Amorphous Silicon Sub-nitrides A-sinx:h〈nd〉
Author: Biggemann D.
Tessler L.R.
Abstract: Neodymium-doped hydrogenated amorphous silicon sub-nitrides a-SiN x:H〈Nd〉 thin films were deposited by rf-sputtering using a Si target partially covered by metallic Nd chips and Ar + N2 + H 2 sputtering gas. Characteristic Nd3+ near infra-red (NIR) photoluminescence (PL) was detected between 10 and 300 K with peaks at ∼935, ∼1090 and ∼1390 nm, corresponding to the intra-4f transitions 4F3/2 → 4I9/2, 4F3/2 → 4I11/2 and 4F3/2 → 4I13/2, respectively. Measurements using different excitation wavelengths indicate that the Nd 3+ excitation occurs through the a-SiNx:H matrix. Varying the nitrogen content x from 0 to nearly 1.3 increases the matrix bandgap. The PL efficiency is maximum when the bandgap corresponds to twice the 4F3/2→4I9/2 transition, indicating a defect-related energy transfer mechanism. The temperature quenching can be as low as less than a factor 3 between 10 and 300 K for 2.8 eV gap samples. Thermal annealing can enhance the PL intensity by a factor 10. Neodymium concentrations above ∼3 × 1020 atoms/cm 3 slightly reduce the PL intensity probably due to excess of inactive defect centers. Along with erbium-doped amorphous silicon alloys, a-SiNx:H〈Nd〉 can be used in the development of photonic devices in the future. © 2003 Published by Elsevier B.V.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.mseb.2003.08.043
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0345016362&partnerID=40&md5=43c34253b74a52054049ef7933717e5a
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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