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|Type:||Artigo de evento|
|Title:||Electronic Structure And Origin Of Ferromagnetism In Ga 1-xmnxas Semiconductors|
|Author:||Da Silva A.J.R.|
Dos Santos R.R.
|Abstract:||We perform a detailed theoretical study, within the density-functional theory, of the electronic structure and magnetic properties of Ga 1-xMnxAs diluted semiconductors. Ab initio total energy results provide evidence that the appearance of a ferromagnetic state in these materials is due to an exchange coupling between the localized ↑ S=52 Mn spins mediated by quasi-localized ↓ holes, with strong p-like character, surrounding the fully polarized Mn d5-electrons. From total energy differences, we find the effective Mn-Mn coupling always ferromagnetic, with the Mn-Mn interaction intermediated by an antiferromagnetic coupling of each Mn spin to the holes. © 2003 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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