Please use this identifier to cite or link to this item:
Type: Artigo de evento
Title: Exciton Trapping In Interface Defects/quantum Dots In Narrow Quantum Wells: Magnetic-field Effects
Author: Barticevic Z.
Pacheco M.
Duque C.A.
Oliveira L.E.
Abstract: The effects of applied magnetic fields on excitons trapped in quantum dots/interface defects in narrow GaAs/Ga1-xAlxAs quantum wells are studied within the effective-mass approximation. The magnetic fields are applied in the growth direction of the quantum wells, and exciton trapping is modeled through a quantum dot formed by monolayer fluctuations in the z-direction, together with lateral confinement via a truncated or infinite parabolic potential in the exciton in-plane coordinate. Theoretical results are found in overall agreement with available experimental measurements. © 2003 Elsevier B.V. All rights reserved.
Rights: fechado
Identifier DOI: 10.1016/j.physb.2003.09.181
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0346685971.pdf205.24 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.