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|Type:||Artigo de evento|
|Title:||Exciton Trapping In Interface Defects/quantum Dots In Narrow Quantum Wells: Magnetic-field Effects|
|Abstract:||The effects of applied magnetic fields on excitons trapped in quantum dots/interface defects in narrow GaAs/Ga1-xAlxAs quantum wells are studied within the effective-mass approximation. The magnetic fields are applied in the growth direction of the quantum wells, and exciton trapping is modeled through a quantum dot formed by monolayer fluctuations in the z-direction, together with lateral confinement via a truncated or infinite parabolic potential in the exciton in-plane coordinate. Theoretical results are found in overall agreement with available experimental measurements. © 2003 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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