Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/102264
Type: Artigo de periódico
Title: Silicon Nitride Etching In High- And Low-density Plasmas Using Sf6/o2/n2 Mixtures
Author: Reyes-Betanzo C.
Moshkalyov S.A.
Swart J.W.
Ramos A.C.S.
Abstract: Silicon nitride etching in high- and low-density plasmas was shown using SF6/O2/N2 mixtures. The kinetics of formation of NO molecules was analyzed using optical emission spectroscopy. Lower selectivities were obtained using the capacitively coupled rf plasma source. Higher NO generation was found in a high-density electron cyclotron resonance (ECR) plasma, while using a O2/N2 mixture.
Editor: 
Rights: aberto
Identifier DOI: 10.1116/1.1547703
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037349933&partnerID=40&md5=fb39ca2b83fb904dcc7595fdbc19d3d1
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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