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|Type:||Artigo de periódico|
|Title:||Silicon Nitride Etching In High- And Low-density Plasmas Using Sf6/o2/n2 Mixtures|
|Abstract:||Silicon nitride etching in high- and low-density plasmas was shown using SF6/O2/N2 mixtures. The kinetics of formation of NO molecules was analyzed using optical emission spectroscopy. Lower selectivities were obtained using the capacitively coupled rf plasma source. Higher NO generation was found in a high-density electron cyclotron resonance (ECR) plasma, while using a O2/N2 mixture.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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