Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101963
Type: Artigo de evento
Title: Study Of The Pinhole Density In A-ge:h And A-ge0.9si0.1:h Thin Films
Author: Champi A.
Comedi D.
Abstract: The pinhole density in ion-beam sputtered a-Ge:H and a-Ge0.9Si0.1:H films was measured as a function of the hydrogen content and sample storage time. Films deposited on Corning glass substrates exhibit pinhole densities that increase with the storage time after their deposition. The average pinhole density reaches a saturation value approximately after three weeks, which is between six and several tens of pinholes per mm2 for non-hydrogenated and hydrogenated films, respectively. The time evolution of the pinhole density seems to be associated to the local creep occurring at bubble edges, the bubbles converting into pinholes when the local strain reaches a critical value. © 2002 Elsevier Science B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0022-3093(01)01191-7
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036538971&partnerID=40&md5=e5da99bd6d8abad48676285e421b9563
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0036538971.pdf120.44 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.