Please use this identifier to cite or link to this item:
Type: Artigo de evento
Title: Microscopic Mechanisms Behind The Al-induced Crystallization Of A-ge:h Films
Author: Chambouleyron I.
Fajardo F.
Zanatta A.R.
Abstract: Raman and infrared spectroscopies have been used to study the crystallization of sputtered hydrogenated amorphous germanium (a-Ge:H) films induced by variable amounts of aluminum. Under the selected deposition conditions Al induces the partial crystallization of Ge films deposited onto crystalline silicon substrates. The analysis of experimental data indicates that Al atoms play a key role in the process. The comparison with data on the local order and coordination of Ga atoms in a-Ge:H suggests that fourfold coordinated Al atoms sitting at the center of tetrahedral sites act as crystallization seeds. © 2002 Elsevier Science B.V. All rights reserved.
Rights: fechado
Identifier DOI: 10.1016/S0022-3093(01)00999-1
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0036540514.pdf286.98 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.