Please use this identifier to cite or link to this item:
Type: Artigo de evento
Title: Proton Radiation Hardening Of Silicon Oxynitride Gate Nmosfets Formed By Nitrogen Implantation Into Silicon Prior To Oxidation
Author: Diniz J.A.
Fo J.G.
Zakia M.B.P.
Doi I.
Swart J.W.
Abstract: Silicon oxynitride (SiOxNy) insulators have been obtained by low-energy nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. Theses films have been used as gate insulators in enhancement nMOSFETs and MOS capacitors. MOS capacitors were used to obtain capacitance-voltage (C-V) measurements. A relative dielectric constant of 3.9 was adopted to extract the Equivalent Oxide Thickness (EOT) of films from C-V curves, resulting in values between 5nm and 12nm. nMOSFETs were bombarded with H+ ion beams (energy of O.17MeV and doses of 0, 1012, 1013 and 1O14 protons/cm2) to investigate radiation hardening. nMOSFET electrical characteristics, such as threshold voltage (VT), transconductances (Gm) and sub-threshold slope (S), were extracted before and after proton radiation. For high dose bombardment, VT, S are increased and Gm is reduced. These oxynitride gate device performance degradation was significant only for doses > 1012 protons/cm2.
Rights: fechado
Identifier DOI: 
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0036995475.pdf306.41 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.