Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101771
Type: Artigo de periódico
Title: Comment On "ion-assisted Pulsed Laser Deposition Of Aluminum Nitride Thin Films" [j. Appl. Phys. 87, 1540 (2000)]
Author: Zanatta A.R.
Ribeiro C.T.M.
Alvarez F.
Abstract: In a recent article [J. Appl. Phys. 87, 1540 (2000)] Lu et al. have reported on the achievement of good quality crystalline aluminum nitride (AlN) films deposited on Si〈100〉 substrates. The films were prepared in the 200-800°C temperature range by the nitrogen-ion-assisted laser ablation of one AlN target. According to their experimental results, the infrared absorption bands due to Al-N bonds display a frequency shift of approx. 80cm -1 as a consequence of the residual stress present in the AlN films. Interestingly, despite such a high stress, the phonon vibration modes do not exhibit any appreciable shift. Actually, most of the phonon frequencies reported by Lu et al. perfectly match those observed in crystalline silicon. The analyses of Lu et al. probably contain inaccuracies regarding the true crystalline quality of their AlN films and is the subject of this comment. © 2002 American Institute of Physics. © 2002 American Institute of Physics.
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Rights: aberto
Identifier DOI: 10.1063/1.1515948
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037112982&partnerID=40&md5=d7696104e4a2c2fdc6f54b353f12314f
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

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