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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampAntonelli, Alexpt_BR
dc.typeArtigopt_BR
dc.titleArsenic segregation, pairing and mobility on the cores of partial dislocations in siliconpt_BR
dc.contributor.authorAntonelli, A.pt_BR
dc.contributor.authorJusto, J. F.pt_BR
dc.contributor.authorFazzio, A.pt_BR
unicamp.authorAntonelli, A., Instituto de Fisica 'Gleb Wataghin', Universidade Estadual de Campinas, CP 6165, CEP 13083-970, Campinas, SP, Brazilpt_BR
unicamp.author.externalJusto, J.F., Escola Politécnica, Universidade de São Paulo, CP 61548, CEP 05424-970, São Paulo, SP, Brazilpt
unicamp.author.externalFazzio, A., Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazilpt
dc.subjectSilíciopt_BR
dc.subjectCristaispt_BR
dc.subjectFalhas de empilhamentopt_BR
dc.subjectArsêniopt_BR
dc.subject.otherlanguageSiliconpt_BR
dc.subject.otherlanguageCrystalspt_BR
dc.subject.otherlanguageStacking faultpt_BR
dc.subject.otherlanguageArsenicpt_BR
dc.description.abstractWe studied the effects of arsenic on properties of dislocations in silicon. The theoretical investigation was carried out using ab initio total energy methods, based on the density functional theory. We find that the interaction of an arsenic impurity in the crystal with a dislocation results in a charge exchange, driving the dislocation core to a negative charge state. This interaction is essentially electrostatic and attractive, and leads to arsenic segregation. Although arsenic segregation to the core is energetically favourable, formation of arsenic pairs inside the core is energetically unfavourable. We also investigated the role of vacancies in arsenic diffusion inside the dislocation core.en
dc.description.abstractWe studied the effects of arsenic on properties of dislocations in silicon. The theoretical investigation was carried out using ab initio total energy methods, based on the density functional theory. We find that the interaction of an arsenic impurity in the crystal with a dislocation results in a charge exchange, driving the dislocation core to a negative charge state. This interaction is essentially electrostatic and attractive, and leads to arsenic segregation. Although arsenic segregation to the core is energetically favourable, formation of arsenic pairs inside the core is energetically unfavourable. We also investigated the role of vacancies in arsenic diffusion inside the dislocation core.pt
dc.description.abstractWe studied the effects of arsenic on properties of dislocations in silicon. The theoretical investigation was carried out using ab initio total energy methods, based on the density functional theory. We find that the interaction of an arsenic impurity in the crystal with a dislocation results in a charge exchange, driving the dislocation core to a negative charge state. This interaction is essentially electrostatic and attractive, and leads to arsenic segregation. Although arsenic segregation to the core is energetically favourable, formation of arsenic pairs inside the core is energetically unfavourable. We also investigated the role of vacancies in arsenic diffusion inside the dislocation core.pt_BR
dc.description.eventConference on Extended Defects in Semiconductors (EDS 2002)pt_BR
dc.relation.ispartofJournal of physics. Condensed matterpt_BR
dc.relation.ispartofabbreviationJ. phys., Condens. matterpt_BR
dc.publisher.cityBristolpt_BR
dc.publisher.countryReino Unidopt_BR
dc.publisherInstitute of Physics Publishingpt_BR
dc.date.issued2002pt_BR
dc.date.monthofcirculationDec.pt_BR
dc.identifier.citationJournal Of Physics Condensed Matter. , v. 14, n. 48, p. 12761 - 12765, 2002.pt_BR
dc.language.isoengpt_BR
dc.description.volume14pt_BR
dc.description.issuenumber48pt_BR
dc.description.firstpage12761pt_BR
dc.description.lastpage12765pt_BR
dc.rightsfechadopt_BR
dc.sourceSCOPUSpt_br
dc.sourceSCOPUSpt_BR
dc.identifier.issn0953-8984pt_BR
dc.identifier.eissn1361-648Xpt_BR
dc.identifier.doi10.1088/0953-8984/14/48/314pt_BR
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0953-8984/14/48/314pt_BR
dc.description.sponsorshipFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorshipCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsorship1FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorship1CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.date.available2015-06-30T16:42:27Z
dc.date.available2015-11-26T14:58:46Z-
dc.date.accessioned2015-06-30T16:42:27Z
dc.date.accessioned2015-11-26T14:58:46Z-
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dc.description.provenanceMade available in DSpace on 2015-11-26T14:58:46Z (GMT). No. of bitstreams: 2 2-s2.0-0037122103.pdf: 129041 bytes, checksum: a6dc9a58a8ee3e5c187007f6b77d492e (MD5) 2-s2.0-0037122103.pdf.txt: 16745 bytes, checksum: db0cb3a713d9bd3e4ce5326ecff48e94 (MD5) Previous issue date: 2002en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/101669
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/101669-
dc.identifier.idScopus2-s2.0-0037122103pt_BR
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dc.description.conferencenomeConference on Extended Defects in Semiconductorspt_BR
dc.description.conferencedate01 a 06 de Junho de 2002pt_BR
dc.description.conferencelocationBologna, Itáliapt_BR
dc.contributor.departmentDepartamento de Física da Matéria Condensadapt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.identifier.source2-s2.0-0037122103-
dc.identifier.source2-s2.0-0037122103pt_BR
dc.creator.orcidorcid.org/0000-0002-2784-812Xpt_BR
dc.type.formArtigo-
dc.type.formArtigo de eventopt_BR
dc.description.sponsorNoteThis work was partially sponsored by the Brazilian agencies FAPESP and CNPq. Computer calculations were performed at the facilities of the CENAPAD-São Paulo.pt_BR
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