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|Type:||Artigo de evento|
|Title:||Impact Ionization And High-field Effects In Wide-band-gap Semiconductors|
|Abstract:||Impact ionization is important for electron transport in wide-band-gap semiconductors at high electric fields. We consider a realistic band structure as well as high-field quantum corrections such as the intracollisional field effect in the calculation of the microscopic scattering rate. A pronounced softening of the impact ionization threshold is obtained. This field-dependent impact ionization rate is included within a full-band ensemble Monte Carlo simulation of high-field transport in ZnS. Although the impact ionization rate itself is strongly affected, little effect is observed on measurable quantities such as the impact ionization coefficient. © 2002 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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