Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101652
Type: Artigo de evento
Title: Impact Ionization And High-field Effects In Wide-band-gap Semiconductors
Author: Reigrotzki M.
Madureira J.R.
Kuligk A.
Fitzer N.
Redmer R.
Goodnick S.M.
Dur M.
Schattke W.
Abstract: Impact ionization is important for electron transport in wide-band-gap semiconductors at high electric fields. We consider a realistic band structure as well as high-field quantum corrections such as the intracollisional field effect in the calculation of the microscopic scattering rate. A pronounced softening of the impact ionization threshold is obtained. This field-dependent impact ionization rate is included within a full-band ensemble Monte Carlo simulation of high-field transport in ZnS. Although the impact ionization rate itself is strongly affected, little effect is observed on measurable quantities such as the impact ionization coefficient. © 2002 Elsevier Science B.V. All rights reserved.
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Rights: fechado
Identifier DOI: 10.1016/S0921-4526(01)01381-3
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036503328&partnerID=40&md5=fd13cfdfc61908afdd0a94ec68a61a48
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

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