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|Type:||Artigo de evento|
|Title:||Near-field Optical Imaging And Spectroscopy Of Single Gaas Quantum Wires|
|Abstract:||Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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