Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: The Origin Of Visible Photoluminescence In Low Power A-si1-xcx:h With X > 0.2
Author: Tessler L.R.
Abstract: Photoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < 0.5 prepared in the low power regime, i.e. containing virtually no sp2 carbon. The decay is non-exponential and presents two peaks in the lifetime distribution for x > 0.2, one slow peak associated to a-Si:H-like luminescence and a fast peak that is responsible for the temperature independent visible luminescence. We conclude that the efficient temperature independent visible photoluminescence is due to a mechanism that is ineffective in a-Si:H, which we attribute to enhanced Coulomb interaction between electron and hole. © 1999 Elsevier Science Ltd. All rights reserved.
Rights: fechado
Identifier DOI: 
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0032648995.pdf91.96 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.