Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101312
Type: Artigo de periódico
Title: The Origin Of Visible Photoluminescence In Low Power A-si1-xcx:h With X > 0.2
Author: Tessler L.R.
Abstract: Photoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < 0.5 prepared in the low power regime, i.e. containing virtually no sp2 carbon. The decay is non-exponential and presents two peaks in the lifetime distribution for x > 0.2, one slow peak associated to a-Si:H-like luminescence and a fast peak that is responsible for the temperature independent visible luminescence. We conclude that the efficient temperature independent visible photoluminescence is due to a mechanism that is ineffective in a-Si:H, which we attribute to enhanced Coulomb interaction between electron and hole. © 1999 Elsevier Science Ltd. All rights reserved.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032648995&partnerID=40&md5=3abab8b2402a79120b2e5710eba04b0e
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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