Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101120
Type: Artigo de periódico
Title: Raman And Xps Characterization Of Vanadium Oxide Thin Films Deposited By Reactive Rf Sputtering
Author: Cazzanelli E.
Mariotto G.
Passerini S.
Smyrl W.H.
Gorenstein A.
Abstract: In this paper we report on Raman and XPS characterization of vanadium oxide thin films deposited by RF-sputtering. The samples were deposited by using a vanadium target in different oxygen fluxes, so that the stoichiometry (O/V ratio) of the oxide was varied. Several physical parameters of the films indicate a strong structural difference between the sample deposited at lower oxygen flux (1 see m) and those obtained with higher flux (from 1.25 to 9 sec m). The increase of O/V ratio corresponds to a lower crystallinity of the thin films as indicated by the initial lowering and the final disappearance of the characteristic Raman mode of V2O5 (crystal) at about 140 cm-1. For the highest flux samples new broad bands develop, typical of amorphous materials, both in polarized as well as in depolarized Raman spectra. © 1999 Elsevier Science B.V. All rights reserved.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032736968&partnerID=40&md5=88085f308256b85ce6f03a2a9deb226e
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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