Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101107
Type: Artigo de periódico
Title: Investigation Of Ion-bombardment Effects On The Formation Of Voids During Deposition Of A-ge : H
Author: Peng Z.L.
Comedi D.
Dondeo F.
Chambouleyron I.
Simpson P.J.
Mascher P.
Abstract: In this work, positron annihilation (PA) and infra-red (IR) spectroscopies are combined to obtain information on the H bonding and the void size distribution as a function of deposition parameters (substrate temperature and ion-bombardment) during reactive ion-beam sputtering deposition (IBSD) for the growth of a-Ge : H films. For a-Ge : H films obtained at substrate temperatures between 180°C and 260°C without ion bombardment of the growth surface, PA studies reveal low-value valence (S) parameters and high core (W) parameters as compared with films grown under less-favorable conditions. These data indicate a relatively low concentration of large voids, the annihilation process being controlled mainly by trapping at vacancies. IR and PA measurements on IBSD samples subjected to in-situ ion-bombardment during growth indicate ion irradiation of the growth surface as a major factor responsible for large void formation. It can thus be concluded that rather compact a-Ge : H films can be obtained by IBSD at substrate temperatures between 180°C and 260°C, by minimizing the ion bombardment of the growth surface. © 1999 Elsevier Science B.V. All rights reserved.
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033357075&partnerID=40&md5=8a33b5073d002d5c046b1bd35e78232c
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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