Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101104
Type: Artigo
Title: Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon
Author: Justo, J. F.
Antonelli, A.
Schmidt, T. M.
Fazzio, A.
Abstract: We investigated the interaction of intrinsic and extrinsic point defects with stacking faults in silicon. The calculations were carried out using ab initio total energy methods. The results show that the formation energies of intrinsic defects and impurities (P, As, and Al) are lower at the stacking fault as compared to the respective defects in crystalline environment. Therefore, stacking faults should have a large concentration of defects, and they should play an important role on the mechanisms of dislocation motion.
We investigated the interaction of intrinsic and extrinsic point defects with stacking faults in silicon. The calculations were carried out using ab initio total energy methods. The results show that the formation energies of intrinsic defects and impurities (P, As, and Al) are lower at the stacking fault as compared to the respective defects in crystalline environment. Therefore, stacking faults should have a large concentration of defects, and they should play an important role on the mechanisms of dislocation motion.
Subject: Defeitos pontuais
Falhas de empilhamento
Deslocamentos em cristais
Country: Holanda
Editor: Elsevier
Citation: Physica B: Condensed Matter. Elsevier Science Publishers B.v., Amsterdam, Netherlands, v. 273-274, n. , p. 473 - 475, 1999.
Rights: fechado
Identifier DOI: 10.1016/S0921-4526(99)00528-1
Address: https://www.sciencedirect.com/science/article/pii/S0921452699005281
Date Issue: 1999
Appears in Collections:IFGW - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0033330126.pdf154.99 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.