Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101104
Type: Artigo de periódico
Title: Effects Of Extended Defects On The Properties Of Intrinsic And Extrinsic Point Defects In Silicon
Author: Justo J.F.
Antonelli A.
Schmidt T.M.
Fazzio A.
Abstract: We investigated the interaction of intrinsic and extrinsic point defects with stacking faults in silicon. The calculations were carried out using ab initio total energy methods. The results show that the formation energies of intrinsic defects and impurities (P, As, and Al) are lower at the stacking fault as compared to the respective defects in crystalline environment. Therefore, stacking faults should have a large concentration of defects, and they should play an important role on the mechanisms of dislocation motion.
Editor: Elsevier Science Publishers B.V., Amsterdam, Netherlands
Rights: fechado
Identifier DOI: 10.1016/S0921-4526(99)00528-1
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033330126&partnerID=40&md5=90bbca954f71757dd87e2f9c8c7a7a25
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0033330126.pdf82.96 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.