Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101033
Type: Artigo de periódico
Title: Raman Scattering Study Of Zincblende Inxga1-xn Alloys
Author: Tabata A.
Silveira E.
Leite J.R.
Trentin R.
Scolfaro L.M.R.
Lemos V.
Frey T.
As D.J.
Schikora D.
Lischka K.
Abstract: We report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-InxGa1-xN (0 ≤ x ≤ 0.31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of InxGa1-xN alloy exhibit a one-mode-type behavior. Their frequencies at Γ lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the C-In0.31Ga0.69N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of ≈0.80.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033243031&partnerID=40&md5=3a24452705d6fe3ea201aa7a3a5adf9c
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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