Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101002
Type: Artigo de periódico
Title: One-step Silicon Nitride Passivation By Ecr-cvd For Heterostructure Transistors And Mis Devices
Author: Din J.A.
De Barros Jr. L.E.M.
Yoshioka R.T.
Lujan G.S.
Danilov I.
Swart J.W.
Abstract: Silicon nitride (SiNx) films with extremely low interface charge densities have been developed by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) deposition on GaAs substrates. The procedure is a one-step process and does not involve H2 and/or N2 pre-treatment of the sample surface. Characterization by Fourier transform infrared (FTIR) and ellipsometry analysis indicate good properties of the film revealing N-H and Si-N bonds. Results of capacitance-voltage (C-V) measurements show surface charge densities on the order of 5×1010 cm-2, which we believe is the lowest surface charge density achieved so far over GaAs.
Editor: Materials Research Society, Warrendale, PA, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032688649&partnerID=40&md5=930d59c252237958878d4220aa222355
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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