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|Type:||Artigo de periódico|
|Title:||One-step Silicon Nitride Passivation By Ecr-cvd For Heterostructure Transistors And Mis Devices|
De Barros Jr. L.E.M.
|Abstract:||Silicon nitride (SiNx) films with extremely low interface charge densities have been developed by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) deposition on GaAs substrates. The procedure is a one-step process and does not involve H2 and/or N2 pre-treatment of the sample surface. Characterization by Fourier transform infrared (FTIR) and ellipsometry analysis indicate good properties of the film revealing N-H and Si-N bonds. Results of capacitance-voltage (C-V) measurements show surface charge densities on the order of 5×1010 cm-2, which we believe is the lowest surface charge density achieved so far over GaAs.|
|Editor:||Materials Research Society, Warrendale, PA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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