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|Type:||Artigo de periódico|
|Title:||Band-edge Modifications Due To Photogenerated Carriers In Single P-type δ-doped Gaas Layers|
Da Silva E.C.F.
De Oliveira J.B.B.
|Abstract:||The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures. © 1999 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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