Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100960
Type: Artigo de periódico
Title: Band-edge Modifications Due To Photogenerated Carriers In Single P-type δ-doped Gaas Layers
Author: Levine A.
Da Silva E.C.F.
Sipahi G.M.
Quivy A.A.
Scolfaro L.M.R.
Leite J.R.
Dias I.F.L.
Lauretto E.
De Oliveira J.B.B.
Meneses E.A.
Oliveira A.G.
Abstract: The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures. © 1999 The American Physical Society.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0004448948&partnerID=40&md5=19d728d674c662c914a6812c86593e15
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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